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HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr
Preliminary data
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C
IXFH 22 N55 VDSS
ID (cont) RDS(on) trr
= 550 V = 22 A = 0.27 W 250 ns
Maximum Ratings 550 550 20 30 22 88 22 30 5 300 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ V/ns W C C C C
TO-247 AD
D (TAB)
G = Gate, S = Source,
D = Drain, TAB = Drain
Features * International standard packages JEDEC TO-247 AD * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance (< 5 nH) - easy to drive and to protect * Fast intrinsic Rectifier Applications
1.13/10 Nm/lb.in. 6 g
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 550 2 4.5 100 TJ = 25C TJ = 125C 250 1 0.27 V V nA mA mA W
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V
Power Factor Control Circuits Uninterruptible Power Supplies (UPS) Battery chargers Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls * Low voltage relays Advantages * Easy to mount with 1 screw (isolated mounting screw hole) * Space savings * High power density
* * * *
VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
94527A (10/95)
(c) 2000 IXYS All rights reserved
1-4
IXFH 22N55
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 11 18 4200 VGS = 0 V, VDS = 25 V, f = 1 MHz 450 135 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25, RG = 2 W (External) 43 70 40 150 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 29 60 40 60 90 60 170 40 85 0.42 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 22 88 1.5 250 400 A A V ns ns
J K L M N
1.5 2.49
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS, -di/dt = 100 A/ms, VR = 100 V TJ = 125C
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXFH 22N55
Fig. 1 Output Characteristics
40
40
TJ = 25C V GS = 10V 9V
6V TJ = 25C VDS = 20V
Fig. 2 Input Admittance
30
ID - Amperes
ID - Amperes
20
30
20
20
5V
10
10
0
0 0 5 10 15 0 1 2 3 4 5 6 7 8 9 10
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.5
TJ = 25C
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.50 2.25
1.4
RDS(on) - Normalized
RDS(on) - Normalized
2.00 1.75 1.50 1.25 1.00 0.75
1.3 1.2
VGS = 10V
VGS = 10V ID = 11A
1.1 1.0 0.9 0 5 10 15 20
VGS = 15V
25
30
35
40
0.50 -50
-25
0
25
50
75
100 125 150
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
25
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
VGS(th)
BV/VG(th) - Normalized
20
1.1 1.0 0.9 0.8 0.7 0.6 0 25 50 75 100 125 150 0.5 -50 -25 0 25 50 75
BVDSS
ID - Amperes
15 10 5 0
100 125 150
TC - Degrees C
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXFH 22N55
Fig.7 Gate Charge Characteristic Curve
10 9 8 7
VDS = 300V ID = 22A IG = 10mA Limited by RDS(on) 100s
1ms 10ms
Fig.8 Forward Bias Safe Operating Area
100
10s
6 5 4 3 2 1 0 0 20 40 60 80 100 120 140
ID - Amperes
VGE - Volts
10
1
100ms
0.1 1 10 100
600
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Capacitance Curves
4500 4000
Ciss
Fig.10 Source Current vs. Source to Drain Voltage
80 70 60
Capacitance - pF
3500
ID - Amperes
3000 2500 2000 1500 1000 500 0 0 5 10 15 20 25
Coss Crss f = 1 Mhz VDS = 25V
50 40 30 20 10 0 0.00
TJ = 25C TJ = 125C
0.25
0.50
0.75
1.00
1.25
1.50
VCE - Volts
VSD - Volts
Fig.11 Transient Thermal Impedance
1
Thermal Response - K/W
D=0.5
0.1
D=0.2 D=0.1 D=0.05
0.01 D=0.02
D=0.01 Single Pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2000 IXYS All rights reserved
4-4

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